Abstract
We report on high-resolution potentiometry of operating organic thin-film field-effect transistors by means of scanning Kelvin probe force microscopy. It is demonstrated that the measured potential reflects the electrostatic potential of the accumulation layer at the semiconductor/insulator interface. We present data revealing gate bias and lateral electric field dependence of the field-effect mobility in poly(hexylthiophene) at temperatures from 50 to 300 K.
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