Abstract
The sheet resistance of indium–tin-oxide (ITO) thin films with different microstructures and morphologies was measured by using a near-field scanning microwave microprobe (NSMM). The NSMM system was coupled to a dielectric resonator with a distance regulation system at an operating frequency f=5.2–5.5 GHz. ITO thin films with different microstructures and morphology were characterized by X-ray diffraction and atomic force microscopy. As the sheet resistance increased, the intensity ratio of the (222) to the (400) diffraction peak increased and the surface roughness increased.
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