Abstract
ABSTRACTUsing electron beam evaporation, we have deposited Al on patterned SiO2 films grown on various Si(100)-based substrates and characterized the Al films by scanning electron microscopy, x-ray diffraction and transmission electron microscopy. The growth mode of Al in the via holes of the SiO2 films is found to depend on the base materials of the holes. For via holes based on Si(100) and TiSi2, Al fills the holes nonconformally, showing little Al on the side walls. The nonconformal growth of Al is useful for submicron via-hole filling because it prevents void formation caused by shadowing effect. In contrast, for holes of AlCu bases, Al grows conformally. For the Al grown in the via holes of Si(100) bases, single crystal Al with Al(110)//Si(100) epitaxial relation can be grown in the holes at a substrate temperature of 300°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
