Abstract
Recently, devices which show non-biased optical bistability (NOB) have been proposed with practical advantages such as low switching energy, low power dissipation, and very simple layout.1-2 For NOB operation, negative differential resistance (NDR) and the photocurrent (Iph) peak at forward bias region are essential. For the optimization of the NOB device performance, both of large electric field change and sufficient absorption change should be achieved under the only source of the potential, the built-in potential (V bt ) due to the p-i-n diode structure.2 In this work, to induce strong light-absorption and internal field swing, we propose and demonstrate a novel NOB device, a series connection of two extremely shallow quantum wells (ESQWs) p-i-n-i-p diodes sandwiched in asymmetric Fabry-Perot (AFP) cavity structure.
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