Non-adiabatic molecular dynamics simulation of ultrafast solar cell electron transfer

Abstract

A non-adiabatic (NA) molecular dynamics (MD) simulation of the photoinduced electron transfer (ET) from a molecular electron donor to the TiO 2 acceptor is carried out. The system under study is typical of the dye sensitized semiconductor nanomaterials used in solar cells, photocatalysis and photoelectrolysis. The electronic structure of the dye-semiconductor system and the adiabatic dynamics are simulated by ab initio density functional theory MD, while the NA effects are incorporated by the quantum-classical mean-field approach. A novel procedure separating the NA and adiabatic ET pathways is developed. The simulation provides a detailed picture of the ET process. For the specific system under study, ET occurs on a 30 fs time scale, in agreement with the ultrafast experimental data. Both adiabatic and NA pathways for the ET are observed. The NA transfer entirely dominates at short times and can occur due to strong localized avoided crossing as well as extended regions of weaker NA coupling. Although the adiabatic ET contribution accumulates more slowly, it approaches that of the NA ET pathway asymptotically. The electron acceptor states are formed by the d-orbital of Ti atoms of the semiconductor and are localized within the first 3–4 layers of the surface. About 20% of the acceptor state density is localized on a single Ti atom of the first surface layer. The simulation predicts a complex non-single-exponential time dependence of the ET process.