Abstract
Diamond Junction Field Effect Transistor Ultrawide bandgap semiconductors offer a new playground for researchers thanks to their huge energy scale. In article 2100542, Julien Pernot and co-workers create a diamond junction field effect transistor from a non-volatile photo-switch by taking advantage of the deep ionisation energy of the nitrogen donor in the n-type region. The state of the transistor can only be switched under illumination. In the dark, the transistor stores the state before switching off.
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