Abstract
High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature ( 104 over 10,000 sec by introducing PMMA as the tunneling layer.
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