Abstract
Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.
Highlights
Recent development of spintronic memory, logic, and signal processing devices requires direct manipulation of magnetism by electric field, which is more power efficient and scalable than by magnetic field
We report the ferroelectric switching of ferromagnetic resonance (FMR) in multiferroic bilayers consisting of ultrathin ferromagnetic Ni80Fe20 (NiFe) and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where a large magnetic anisotropy change of 1.7 μJ/m2 is demonstrated under the application of ±10 V voltage pulses at room temperature
Angular-dependent ferromagnetic resonance measurement is utilized to investigate the interfacial charge-mediated ME effect, providing a mechanism to distinguish the origin of complex and subtle ME coupling in multiferroic bilayers
Summary
Recent development of spintronic memory, logic, and signal processing devices requires direct manipulation of magnetism by electric field, which is more power efficient and scalable than by magnetic field. Of particular recent scientific and technological interests are ferromagnetic/ferroelectric multiferroic bilayers, such as LSMO/PZT28, Co/P(VDF-TrFE)[12], and CoFe/BST44, where the functionality is similar to recently proposed magnetic/high-k dielectric stacks but the associated volatile challenges have been addressed by replacing the dielectric layer with a well-established charge-screening ferroelectric thin film. In these multiferroic bilayers, the remanent polarization in ferroelectric layer offers a convenient source of switchable charges, and satisfies the need for low power-consumption, non-volatile behaviour in electrically controlled magnetic devices. Angular-dependent ferromagnetic resonance measurement is utilized to investigate the interfacial charge-mediated ME effect, providing a mechanism to distinguish the origin of complex and subtle ME coupling in multiferroic bilayers
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