Abstract
A systematic study of the halfwidths of the ρxx peaks, ΔB(T), and (∂ρxy/∂B)max as a function of electron density, or equivalently, disorder, has been undertaken. Our samples are low mobility, gated GaAs/Al0.3Ga0.7As heterostructures (HS). Scaling arguments predict the linewidths of ρxx peaks in the IQHE to vary as ΔB∼Tκ, where κ is universal. We find that κ decreases with increasing Landau level number, is a function of disorder and is sample dependent. We investigate peaks 0↓, 1↑, 1↓, and unsplit peaks 1–4 at densities in the range 2–6×1011 cm−2 For the 1↑ peak, κ is 0.6 at high densities. Values of κ range from 0.15 to 0.4 for unsplit peaks These results differ from reported κ=0.42 for InGaAs/InP HS and some GaAs/AlGaAs HS below 200 mK.
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