Abstract
AbstractThis paper presents an analytical analysis of a dual‐metal gate all around junctionless accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET) possessing a horizontal‐like non‐uniform doping profile. The 2‐D electrostatic potential distribution is evaluated using Poisson's equation under the applicable boundary conditions. Also, the impact of straggle length parameter and the peak doping concentration upon the device behavior is also examined. For authenticating the obtained analytical outcomes, TCAD simulations were also performed. Both the results were contrasted and found to be in good agreement. The outcomes obtained for non‐uniform doped DMGAA‐JAM‐NWFET are also compared with that of uniformly doped DMGAA‐JAM‐NWFET and finer electrical characteristics were noticed for non‐uniformly doped device.
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