Non-thermodynamic approach to including bombardment-induced post-cascade redistribution of point defects in dynamic Monte Carlo code

Abstract

The redistribution of the elements as a result of atomic relocations produced by the ions and the recoils due to the ballistic and transport processes is investigated by making use of a dynamic Monte Carlo code. Phenomena, such as radiation-enhanced diffusion (RED) and bombardment-induced segregation (BIS) triggered by the ion bombardment may also contribute to the migration of atoms within the target. In order to include both RED and BIS in the code, we suggest an approach which is considered as an extension of the binary collision approximation, i.e. it takes place “simultaneously” with the cascade and acts as a correction to the particle redistribution for low energies. Both RED and BIS models are based on the common approach to treat the transport processes as a result of a random migration of point defects (vacancies and interstitials) according to a probability given by a pre-defined Gaussian. The models are tested and the influence of the diffusion and segregation is illustrated in the cases of 12 keV 121Sb + implantation at low fluence in SiO 2/Si substrate and of self-sputtering of Ga + ions during profiling of SiO 2/Si interfaces.