Abstract
Results of the growth of semi-insulating GaAs crystals by the VCz method without B 2O 3 encapsulant are presented. Crystals have been grown from Ga-rich and near-stoichiometric melts controlled by As partial pressure in the range from 590°C to 630°C. The CO content in the gas atmosphere has been controlled. We investigated the influence of melt composition, reduced boron incorporation and adjusted carbon concentration. Native and impurity defect concentrations are compared with those of conventional VCz samples.
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