Abstract
Line collapse or distortion of high-aspect-ratio nanostructures during drying step in wet process has been an issue in semiconductor industry due to feature size shrinkage following rapid technology advancement. In this work, three drying schemes, including drying with solvent vapor exposure, by sublimation, and following surface modification, were compared on 2x NAND STI structures. Acetone vapor assisted drying achieved non-stiction performance on high-aspect-ratio trenches with both 40nm and 20nm spacing. Sublimation and SAM formation only worked on the features with 40nm spacing. Further investigation to follow for failure mechanism study and stiction-free drying development.
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