Abstract
The rapid degradation of the luminescence emitted by GaAs/AlGaAs double heterostructures has been studied by spatially resolved photoluminescence at 4 k. A detailed analysis of the recombinations shows that a non-radiative process is efficient at low temperature and high injection in the degraded areas. We propose that the deformation potential induced by the strain field around dislocations is responsible for this new non-radiative process.
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