Non-polar InGaN quantum dots grown on the m-plane of n-GaN nanowires by a self-catalyst method using metal organic chemical vapor deposition

Abstract

We propose a novel nanostructure semiconductor which integrated the nanowire (NW) template and the zero dimensional quantum dot (QD) active region. We successfully fabricated InGaN quantum dots on the nonpolar facet of n-GaN NWs via a new self-catalyst method using In droplets. The resultant InGaN QDs were of a quadrangle shape. Their average width and height were 30 and 7 nm, respectively. HR-TEM analysis verified that the InGaN QDs were epitaxially grown on the m-plane facet of n-GaN NWs and had high crystalline quality without any defects. The low-temperature PL spectra of InGaN QDs indicated a prominent emission in the range of 387–425 nm which consisted of several overlapping sharp peaks owing to the different sizes of InGaN QDs. As a result, we expect that this unique InGaN QD growth method can be widely applied to other nanostructure semiconductor systems and that this newly integrated nanostructure semiconductor will be a very promising material for high-quality optoelectronic device applications.