Abstract
AbstractThe growth of cubic group III‐nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally‐off heterojunction field‐effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non‐polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C‐SiC (001). The electrical insulation of 3C‐SiC was realised by Ar+ implantation before c‐AlGaN/GaN MBE. The structural properties of the epilayers were studied by high‐resolution x‐ray diffraction (HRXRD). HFETs with normally‐off and normally‐on characteristics were fabricated of cubic AlGaN/GaN. Capacitance‐voltage (CV) characteristics of the gate contact were performed to detect the electron channel at the c‐AlGaN/GaN hetero interface. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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