Abstract
AbstractInGaN quantum dot (QD) structures have been grown by metal organic vapour phase epitaxy (MOVPE) on non‐polar (11‐20) GaN surfaces by employing an anneal step in nitrogen immediately after the growth of the InGaN. Here, we compare the growth of such structures on pseudo‐substrates grown using an epitaxial lateral overgrowth (ELOG) technique and on pseudo‐substrates grown using a simpler in situ SiNx interlayer. The less complex defect reduction approach results in a significantly higher defect density, but does not detrimentally effect the QD formation. For both types of pseudo‐substrate, sharp peaks with resolution limited widths are observed in both cathodoluminescence at 9 K and micro‐photoluminescence at 4.2 K. The QDs demonstrate significantly reduced exciton lifetimes compared to structures grown on c‐plane, which has advantages for possible applications in single photon sources. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
