Non‐polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal‐organic vapour phase epitaxy

Abstract

AbstractInGaN quantum dot (QD) structures have been grown by metal organic vapour phase epitaxy (MOVPE) on non‐polar (11‐20) GaN surfaces by employing an anneal step in nitrogen immediately after the growth of the InGaN. Here, we compare the growth of such structures on pseudo‐substrates grown using an epitaxial lateral overgrowth (ELOG) technique and on pseudo‐substrates grown using a simpler in situ SiNx interlayer. The less complex defect reduction approach results in a significantly higher defect density, but does not detrimentally effect the QD formation. For both types of pseudo‐substrate, sharp peaks with resolution limited widths are observed in both cathodoluminescence at 9 K and micro‐photoluminescence at 4.2 K. The QDs demonstrate significantly reduced exciton lifetimes compared to structures grown on c‐plane, which has advantages for possible applications in single photon sources. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)