Abstract
Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses important experimental and theoretical challenges. In this work, we investigate the magnetoelectrical signals of a ferromagnetic 3D nanodevice integrated into a microelectronic circuit using direct-write nanofabrication. Due to the 3D vectorial nature of both electrical current and magnetization, a complex superposition of several magnetoelectrical effects takes place. By performing electrical measurements under the application of 3D magnetic fields, in combination with macrospin simulations and finite element modeling, we disentangle the superimposed effects, finding how a 3D geometry leads to unusual angular dependences of well-known magnetotransport effects such as the anomalous Hall effect. Crucially, our analysis also reveals a strong role of the noncollinear demagnetizing fields intrinsic to 3D nanostructures, which results in an angular dependent magnon magnetoresistance contributing strongly to the total magnetoelectrical signal. These findings are key to the understanding of 3D spintronic systems and underpin further fundamental and device-based studies.
Highlights
Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies
The field of spintronics in recent years has focused on control of spin states via electrical currents through the spintransfer torque[7] (STT) effect, which has led to the recent development of nonvolatile random-access memory (MRAM) devices.[8]
We demonstrate the direct integration of a complex 3D magnetic nanostructure into a microelectronic circuit via direct-write nanoprinting and characterize the behavior of intrinsic magnetotransport effects such as the anisotropic magnetoresistance (AMR) and AHE in a 3D nanocircuit under the application of external magnetic fields
Summary
Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. Since the discovery of the anisotropic magnetoresistance (AMR) by Lord Kelvin in 1857,1 the fundamental investigation and exploitation of phenomena concerning the interplay between magnetism and electrical transport has seen incredible progress.[2] pioneering studies of intrinsic effects originating from spin−orbit coupling in ferromagnetic materials[3] such as AMR and anomalous Hall effect[4] (AHE) have been followed by discoveries of the giant magnetoresistance[5] (GMR) and tunnel magnetoresistance[6] (TMR) These effects have underpinned the magnetic data storage revolution of recent decades.[2] Building upon this success, the field of spintronics in recent years has focused on control of spin states via electrical currents through the spintransfer torque[7] (STT) effect, which has led to the recent development of nonvolatile random-access memory (MRAM) devices.[8] All these advances, together with its role in today’s digital world, make spintronics one of the most successful areas of nanotechnology.[2] Today, alternative forms of controlling the magnetic state via different mechanisms, e.g., spin−orbit torques[9] (SOT), electric fields,[10] and optical probes[11] are garnering much interest, with the prospect that future spintronic devices will impact a significant number of technological areas,[8] including the emerging field of neuromorphic computing.[12]. Before it becomes possible to fully exploit the potential of
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