Abstract
The effective electron Landé factor in GaAs – Ga 1 - x Al x As rectangular quantum well wires, under magnetic fields applied along the wire axis, is studied by taking into account the non-parabolicity and anisotropy of the conduction band within the Ogg–McCombe effective Hamiltonian. Confinement effects on the electron wavefunctions are explored in order to evaluate its influence on the behavior of the effective Landé factor. Calculations for the electron g ∥ factor in GaAs – Ga 1 - x Al x As rectangular quantum well wires are compared with the previous theoretical results obtained for GaAs – Ga 1 - x Al x As cylindrical quantum well wires. Such comparison clearly indicates the influence of the wire shape on the electron Landé factor in GaAs – Ga 1 - x Al x As quantum well wires.
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