Abstract
Chemoresistive properties of crystalline solids strongly depend on the concentration of stoichiometric defects. In the case of tin oxide, oxygen vacancies are a case in point of such kind of defects. We address the problem of band bending and Schottky barrier formation in tin oxide. We approached the problem of charged native defects, oxygen vacancies, in a metal oxide in equilibrium with an oxygen containing ambient under three equivalent points of view. We focused on the non-parabolic barriers character that forms at intergrains. Implications in electrical responses to oxygen concentration variations will be discussed.
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