Abstract
The Cs/GaAs(110) interface provides a model system for investigations into the initial stages of metallization of a semiconductor surface. We have examined the valence states of both clean GaAs(100) and Cs/GaAs(110) by angle-resolved photoemission spectroscopy. For Cs exposures at room temperature, the Cs coverage does not exceed one monolayer and the resulting interface is non-metallic. The Cs coverage can be increased by cooling the substrate to ∼190 K, whereupon the second Cs layer is metallic.
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