Abstract
The electrical characteristics of topological-switching random access memory (TRAM) fabricated from superlattice films of [GeTe/Sb2Te3] were studied in order to show non-melting switching. A rectangular pulse with a very short width enabled SET/RESET switching, which was evidence of the non-melting feature. Moreover, we found clear interference fringes in the superlattice films by direct observation by transmission electron microcopy (TEM) after 10 million cycles switching. This was another piece of evidence of the non-melting feature of the TRAM.
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