Abstract
To evaluate the usefulness of high-current non-mass-analysed (NMA) ion implantation using a new microwave ion source, the photovoltaic properties of silicon solar cells were studied. When phosphorus vapour is introduced into the ion source, it provides implant current of more than 10 mA for the 5–15 keV energy range. The fraction of neutral phosphorus particles implanted together with ions is typically less than 10% of the total dose. The conversion efficiency of solar cells fabricated by NMA implantation is about 10% without any anti-reflection coating. Changes in implantation energy do not significantly change the values of these efficiencies. Continuous and stable oxygen ion beams of about 110 mA were obtained at 5.0 kV, which is high enough to apply to material modification in metals, insulators and semiconductors.
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