Abstract
The characterisation of photodiodes used as photosensors requires a determination of the number of electron–hole pairs produced by scintillation light. One method involves comparing signals produced by X-ray absorptions occurring directly in the avalanche photodiode with the light signals. When the light is derived from light-emitting diodes in the 400–600 nm range, significant non-linear behaviour is reported. In the present work, we extend the study of the linear behaviour to large-area avalanche photodiodes, of Advanced Photonix, used as photosensors of the vacuum ultraviolet (VUV) scintillation light produced by argon (128 nm) and xenon (173 nm). We observed greater non-linearities in the avalanche photodiodes for the VUV scintillation light than reported previously for visible light, but considerably less than the non-linearities observed in other commercially available avalanche photodiodes.
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