Abstract
The electronic band structure of Germanium has been studied under high strain (>1%) using a combination of Keating’s model and Tight-Binding formalism. The study has been performed for different kinds of strains (uniaxial and biaxial) and considering the three main crystallographic directions of Germanium: 〈001〉,〈110〉 and 〈111〉. Our results have been compared with the predictions of Deformation Potential Theory, observing an important disagreement for deformations higher than 1% and showing a non-linear dependency on the strain applied. These results are corroborated experimentally, proving the accuracy of the approach.
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