Abstract
A concept of random spatial fluctuations in the potential landscape of disordered semiconductors is employed to explain the effect of suppressed charge carrier recombination in these materials. The rate of bimolecular recombination is shown to be anomalously low due to spatial separation of electrons and holes in the fluctuating potential landscape. Photoexcited carriers can avoid geminate recombination due to the effect of a sufficiently strong local electric field coupled to the potential fluctuations.
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