Abstract
The crystallization kinetics of Ge10Se(90−x)Tlx (x = 20, 30 and 40 at. %) chalcogenide glasses have been intensively studied using non-isothermal differential thermal analysis DTA. Various models were applied to determine the average values of activation energies for the glass transition Eg and crystallization Ec processes as a function of the glass transition temperature Tg, onset crystallization temperature Tc and peak crystallization temperature Tp with heating rate α and Tl content. The values of Eg and Ec were found to be dependent on both of the heating rate and system composition. In Accordance with Avrami exponent n, the crystallization mechanism in the compositions Ge10Se70Tl20 and Ge10Se60Tl30 is three dimensional growth, while in Ge10Se50Tl40 is two dimensional nucleation growth. Thermal characteristics of the investigated ternary glass alloy such as fragility Fg, stability SP and glass formation ability GFA were also studied.
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