Abstract
As new wide band-gap (WBG) devices are developed and improved, new topologies and control schemes are required to take advantage of the ultra-fast switching turn on/off speeds that are now available, without the limitations of switching losses and unacceptable EMI from fast switching transitions. This paper presents a non-isolated DC-DC resonant link converter that allows for soft switching over an extended load range that is particularly suited to GaN devices.
Highlights
The development of wide band-gap (WBG) devices provides an opportunity to dramatically increase the achievable switching frequencies in switch-mode power supplies
The incorporation of WBG devices in high-frequency hard-switched converters is limited by both the switching losses and the EMI resulting from the fast switching transitions [1, 2], in addition to the EMI generated at high switching frequencies by circuit parasitics
To fully utilise their ultra-fast turn on/off times in EMI sensitive environments, WBG devices are inherently suited to soft-switched topologies
Summary
The development of wide band-gap (WBG) devices provides an opportunity to dramatically increase the achievable switching frequencies in switch-mode power supplies. The incorporation of WBG devices in high-frequency hard-switched converters is limited by both the switching losses and the EMI resulting from the fast switching transitions [1, 2], in addition to the EMI generated at high switching frequencies by circuit parasitics. The use of resonant passive components can allow circuit and device parasitics to be incorporated into the circuit design, further reducing EMI. The WBG resonant converters can exploit device capacitance to achieve both low switching loss and controlled EMI. Resonant topologies generally require devices and components to be rated up to 2.5 times the supply voltage, the clamping circuit in the resonant link topology reduces this to as low as 1.2 times the supply voltage. An 150 W 50 V to 20 V converter operating at a resonant switching frequency 1 MHz has been simulated to show that converter frequency is scalable and, suitable for use with GaN devices
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