Abstract
It has been shown recently that high flux X-Ray exposures induce damages in hydrogenated membranes, due to a change in the hydrogenated bond configurations. This is why we have studied the R.F. sputtering deposition of non-hydrogenated silicon nitride and silicon carbide. Sputtered Si xN y films are compared with plasma C.V.D. Si xN yH z films. Silicon carbide has been also deposited by R.F. sputtering and its high Young Modulus has allowed the elaboration of thin membranes in view of soft X-Ray lithography (λ > 1 nm).
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