Abstract
It has been proposed that negative-bias temperature instability (NBTI) is driven by interface-state generation, rate limited by hydrogen <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">transport</i> . In this letter, we examine dynamic NBTI characteristics and present evidence which does not conform to a hydrogen-transport model. It is observed that the amount of recovery of the threshold voltage shift |Δ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>t</sub></i> | remains constant, independent of the number of stress/recovery (SR) cycles. This behavior is inconsistent with the hydrogen-transport model, which stipulates that the amount of |Δ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>t</sub></i> | recovery should decrease with increase in the number of SR cycles. Results show that dynamic NBTI is made up of a symmetric "switching hole-trap" mechanism superimposed on a background of relatively permanent deep-level hole trap and interface-state generation.
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