Non-GCA modeling of near threshold I-V characteristics of DG MOSFETs

Abstract

This work focuses on modeling of near threshold region (Vgs − Vt < a few kT/q) of DG (Double-Gate) MOSFETs with velocity saturation. Accurate modeling of this region is important for design of low-power analog circuits. A non-GCA (Gradual Channel Approximation) model is developed that takes the nonlinear dependence of inversion charge density on quasi-Fermi potential near threshold into account. It has been applied to both n = 1 and n = 2 velocity saturation models. The I-V characteristics generated by the model are consistent with TCAD simulations.