Abstract
Monte Carlo simulation is carried out to investigate the transport parameters of the two-dimensional electron gas in AlGaAs/GaAs heterostructures. In addition to diffusion coefficient and drift velocity at high electric fields, we derive the length coefficient defined by Price for an extended drift-diffusion model, which describes non-equilibrium carrier transport in semiconductors. The length coefficient is found to be almost zero at electric fields less than 3 kV cm-1 and shows a maximum of about 550 nm at 4 kV cm-1, decreasing gradually to 100 nm at 10 kV cm-1. The diffusion coefficient is found to be strongly affected by the degeneracy of the distribution function.
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