Abstract
The behaviour of point defects in strained growing Czochralski (CZ) silicon is theoretically examined. Effects of stress on the equilibrium concentration and diffusion are quantitatively evaluated. Non-equilibrium thermodynamic analyses of the effect of non-uniform stress on the diffusion of vacancies, self-interstitials and recombination between them are performed. The contribution of diffusion in a non-uniform stress is compared to those of chemical and thermo-diffusion.
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