Abstract
The non-equilibrium segregation of silicon from the bulk to the (110) surface of a Fe-6.3at%Si single crystal was monitored in the temperature range 484 to 536°C by means of AES. Two distinct processes were observed. Initially a diffusion process controlling the initial surface enrichment of Si up to a temporary equilibrium value of about 15% was observed. This value corresponds to a 7 × 1 LEED pattern observed in similar crystals. Subsequently a two-dimensional nucleation process starts allowing more atoms onto the surface. Activation energies for both mechanisms were determined and are respectively 170 ± 20 and 480 ± 60 kJ mol .
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