Abstract
Abstract A comparison is made for different semiconductors, of the non equilibrium phonon distributions induced by photon absorption. It is found that energetic carriers create preferentially LO-phonons for GaAs where Frohlich type interaction dominates. For Si and the intermediate case of InSb the energetic carriers still relax through optical phonons. For InSb LO- and TO-phonons participate in the same proportion. Highest phonon temperatures are obtained in the layer semiconductor GaSe.
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