Abstract

Organic light-emitting devices (OLEDs) consisting of a non-doped phosphorescent dye that inserted in an exciplex forming planar structure have been fabricated, and the thickness of ultrathin phosphor layer is optimized to achieve high efficiency. The results showed that OLEDs based on the exciplex interface and a 0.5 nm thick phosphorescent dye have a power efficiency, a current efficiency, and an external quantum efficiency of 37.4 lm/W, 40.5 cd/A, and 14.3%, respectively, which are almost two-folds higher than those with non-exciplex interface devices. Meanwhile, the efficiency roll-off is significantly suppressed. These improved device performances are attributed to the elimination of triplet energy leakage from exciplexes to constituting molecules, efficient energy up conversion of triplet exciplexes and complete host-guest Förster energy transfer. These results will provide an easily-fabricated and time-saving approach for high-performance OLEDs.

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