Abstract
Laser annealing is performed to crystallize a 10 nm thick non-doped hafnium dioxide (HfO2) thin film. The influence of the laser annealing dwell time on the crystallization process is investigated considering the Gibbs free energy diagram of various HfO2 phases (i.e. monoclinic, cubic, tetragonal, and orthorhombic). Progressive phase transformations as a function of the dwell time are evidenced and discussed. Furthermore, for the sample showing ferroelectricity, the endurance property is much improved compared to the previously reported ferroelectric non-doped HfO2.
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