Abstract
Quantitative x-ray diffraction topography techniques have been used to measure the residual strain magnitude and uniformity of deposition for Mo and W sputtered films on Si(100) substrates. High sensitivity rocking curve measurements were able to determine differential strains for films as thin as 2.5 nm; while Bragg angle contour mapping had similar sensitivity and was also able to assess coating uniformity and stress distribution over areas covering a whole wafer. Measurements of strain versus film thickness over a range of 2.5 nm to 80 nm showed that a critical thickness exists for maximum residual strain. Growth beyond this range produces stress relaxation. This non-destructive type of analysis could be employed on a wide range of film-substrate combinations.
Published Version
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