Abstract
In the current work, it was investigated to the K X-ray fluorescence efficiency and chemical effect on vacancy transfer probability for some tin compounds. We used Br2Tin, TinI2, SeTin, TinF2, TinSO4, TinCl2, TinO and TinS compounds for experimental study. The target samples were irradiated with 241Am annular radioactive source at the intensity of 5 Ci which emits gamma rays at wavelength of 0.2028 nm. The characteristic x-rays emitted because of the excitation are collected by a high-resolution HPGe semiconductor detector. It has been determined that the experimental calculations of the tin (Sn) element are compatible with the theoretical calculation. In addition, we have calculated the experimental intensity ratios, fluorescence yields and total vacancy transfer probabilitiesfor other Sn compounds.
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