Abstract
In this work, we studied the controlled microplasma breakdown of InGaN/GaN heterostructures in power light-emitting diodes (LEDs) prepared on various substrates (SiC, AuSn/Si, Al2O3). It was ascertained that LED microplasma characteristics are related to their functional parameters. It was shown that nondestructive control of the critical defects and diagnostics of the InGaN/GaN power LEDs are possible because they are based on the following parameters of microplasmas: (1) voltage of the first microplasma; (2) current of the first microplasma; (3) amount of the microplasmas; (4) integrated luminescence intensity of the microplasmas; (5) ratio of the blue and yellow band luminescence peak intensities for the microplasmas; (6) displacement between electroluminescence peaks for forward and reverse biases. It was ascertained that the majority of microplasmas arise near the faces of the crystallites’ grain boundaries.
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