Abstract
Separation by implanted oxygen (SIMOX) substrates suitable for the fabrication of thin film fully depleted devices ( i.e. with silicon overlayer thicknesses of less than 1000 Å) have been produced by low energy (70 keV) oxygen implantation (to doses of 3 × 10 17, 7 × 10 17 and 10 × 10 17 O + cm −2) followed by annealing at 1405 °C for 30 min. Detailed structural analyses of the specimens were carried out, non-destructively, by microscope spectrophotometry (MSP) and, destructively, by cross-sectional transmission electron microscopy (XTEM). The results obtained from the MSP evaluation showed that the structures (produced with doses of 3 × 10 17, 7 × 10 17 and 10 × 10 17 O + cm −2) consist of a thin silicon film overlying a region which varies in structure from discrete oxide precipitates, interwoven by silicon (for the lowest dose), to a continuous oxide layer containing a few silicon islands (for the highest dose). For all of the samples, extremely good fits were obtained between the measured and simulated MSP data, without the need for unjustified fitting parameters. In all cases, the thickness and physical composition of the various layers were found to agree extremely well with those determined, destructively, by XTEM.
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