Abstract
We developed NiO/β-Ga2O3 heterojunction power devices with a breakdown voltage of −644 V, a low leakage current of about 1 × 10−6 (A cm−2) at −600 V and an on-resistance of 10.85 mΩ cm2 with high thermal stability with the operation temperature higher than 130 °C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.