Non-Contact Technique for Determining the Mechanical Stress in thin Films on Wafers by Profiler

Abstract

This paper presents an algorithm for analysis of relief for the purpose of calculating mechanical stresses in a selected direction on the plate in the form of software package Matlab. The method allows for the measurement sample in the local area. It provides a visual representation of the data and allows to get stress distribution on wafer surface. Automated analysis process reduces the likelihood of errors researcher. Achieved time saving during processing results. In carrying out several measurements possible drawing card plate to predict yield crystals. According to this technique done in measurement of mechanical stresses of thermal silicon oxide film on a silicon substrate. Analysis of the results showed objectivity and reliability calculations. This method can be used for selecting the optimal parameters of the material deposition conditions. In software of device–technological simulation TCAD defined process time, temperature and oxidation of the operation of the sample environment for receiving the set value of the dielectric film thickness. Calculated thermal stresses are in the system silicon–silicon oxide. There is a good correlation between numerical simulations and analytical calculation. It is shown that the nature of occurrence of mechanical stress is not limited to the difference of thermal expansion coefficients of materials.