Abstract
In this paper, we propose and demonstrate a 2 × 2 optical Benes switching unit based on two nested silicon microring resonators (MRRs) monolithically integrated on a silicon-on-insulator (SOI) wafer. High extinction ratios (ERs) of about 44.7/38.0 dB and low crosstalk values of about −37.5/−45.2 dB at cross/bar states are obtained with the fabricated device. The operation principle is theoretically studied and the switching function is verified by system demonstration experiments with 10 and 12.5 Gb/s non-return-to-zero (NRZ) signals. The switching speed on the order of gigahertz based on free carrier effect in silicon is also experimentally demonstrated.
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