Abstract
The results of comparative theoretical analyzes of the behavior of internal low-frequency noises, signal-to-noise ratio and sensitivity to DNA molecules for EIS and ISFET based nanosize biosensors are presented. It is shown that EIS biosensor is more sensitive to the presence of DNA molecules in aqueous solution than ISFET sensor. Internal electrical noises level decreases with the increase of concentration of DNA molecules in aqueous solution. In the frequency range 10−3 - 103 Hz noises level for EIS sensor about in three orders is higher than for ISFET sensor. In the other hand, signal-to-noise ratio for capacitive EIS biosensor is much higher than for ISFET sensor.
Highlights
Biosensors based on the field-effect transistors (BioFETs) are potential candidates for future bioassay applications due to its fast response, high sensitivity, high signal-to-noise ratio, small sensing size and low cost
The noise analysis of ion-sensitive field-effect transistors (ISFET) so far performed in different literature relates only to sources originated from FET structure which is almost constant for a particular device, the pH, or charged DNA molecules concentration dependent electrochemical noise has not been substantially explored and analyzed in detail
Numerical simulation of the noise spectral density and signal-to-noise ratio we do for EIS and ISFET sensors based on the silicon and silicon dioxide
Summary
Biosensors based on the field-effect transistors (BioFETs) are potential candidates for future bioassay applications due to its fast response, high sensitivity, high signal-to-noise ratio, small sensing size and low cost. Previous theoretical works showed the four DNA nucleotides possess statistically distinguishable electronic signatures in the form of ionic blockade or tunnel current distributions when accounting for structural distortions and partial control of the DNA dynamics [7] [8] [9] [10] [11] These results indicate DNA sequencing is, in principle, possible via transverse current measurements. The noise analysis of ISFETs so far performed in different literature relates only to sources originated from FET structure which is almost constant for a particular device, the pH, or charged DNA molecules concentration dependent electrochemical noise has not been substantially explored and analyzed in detail. Numerical simulation of the noise spectral density and signal-to-noise ratio we do for EIS and ISFET sensors based on the silicon (as semiconductor) and silicon dioxide (as insulator)
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