Abstract
The gas sensor response of the tin oxide (SnO2) semiconductor toward carbon monoxide (CO) gas has been simulated using the noise spectroscopy technique. The Wolkenstein gas adsorption model is used to calculate the surface coverage of environmental oxygen ions and target gas molecules. The interaction of CO gas molecules with the negatively charged oxygen ions has been incorporated in the numerical model. The equilibrium charge neutrality condition of the semiconductor material has been solved as a function of gas adsorption parameters like surface coverage, temperature, pressure and surface potential. Eventually, the power density spectrum (PDS) of the electrical conductance of the sensing layer was calculated before and after the gas adsorption conditions. It has been observed that the semiconductor band bending increases sharply at a certain concentration of environmental oxygen gas concentration (10−4 to 10−3 atm). At a temperature of 480 K, a steep decrease in surface potential was observed. This temperature range of maximum sensor response was optimized for calculating noise spectrum of electrical conductivity fluctuations at equilibrium condition of adsorption-desorption. The cutoff frequency (109 Hz) was calculated using normalized PDS of electrical conductance. The gas sensor response was calculated as a ratio of film conductance before and after the gas adsorption as a function of gas pressure and surface temperature at the calculated cutoff frequency. The increase in sensor response was observed with the increase in CO partial pressure as a function of temperature for a specific cut off frequency. The comparison of sensor response of the presented model has been demonstrated with another published numerical model. The presented model shows improved sensor response for higher (>10−8 atm) CO partial pressure.
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