Abstract
The noise term involved in the impedence field method, for modelling the noise of devices, which may work under both space-charge and hot carrier conditions, is shown to be proportional to the local noise temperature and to the local ac conductivity. This allows one to determine the noise source term experimentally, which is performed, as an example, for n-type silicon at 77 K. Also are established the mathematical conditions, under which the impedance field method reduces to the salami method.
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