Abstract
The noise term involved in the impedence field method, for modelling the noise of devices, which may work under both space-charge and hot carrier conditions, is shown to be proportional to the local noise temperature and to the local ac conductivity. This allows one to determine the noise source term experimentally, which is performed, as an example, for n-type silicon at 77 K. Also are established the mathematical conditions, under which the impedance field method reduces to the salami method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
