Noise sources in silicon on insulator (SIMOX) MOSFET's

Abstract

We propose a simple model in order to separate the noise sources related to the front and back SiSiO 2 interfaces and film volume in silicon on insulator (SOI) MOS transistors. From low-frequency noise measurements in depletion-mode and enhancement-mode SIMOX MOSFET's, single-level traps at the back interface and surface and volume defects are detected in high-temperature annealed wafers. These properties are compared with those of SIMOX films annealed at temperatures below 1250°C.