Noise reduction by bias cooling in gated Si/Six Ge1−x quantum dots

Abstract

Silicon–germanium heterostructures are a promising quantum circuit platform, but crucial aspects, such as the long-term charge dynamics and cooldown-to-cooldown variations, are still widely unexplored quantitatively. In this Letter, we present the results of an extensive bias cooling study performed on gated silicon–germanium quantum dots with an Al2O3 dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 μHz to 10 mHz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7 V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger–Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions.