Abstract
It was found that for strained Si channel layers of supercritical thickness on relaxed SiGe virtual substrates, the 1/f noise on average is maintained at the same level as in unstrained devices. Short gate length nMOSFETs were analyzed statistically and the noise level variation, across a large number of samples, was similar in strained and unstrained devices. The obtained noise level variation was partly related to gate length fluctuations across the wafer, which was evident from a small VT fluctuation.
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